Prof. Dr.-Ing. Peter Wellmann
Projektleitung Forschungsgruppe CGL (Crystal Growth Lab)
FAU Erlangen-Nürnberg
/
Lehrstuhl für Werkstoffwissenschaften (Materialien der Elektronik und der Energietechnologie)
Über die Person
Die Forschungsaktivitäten im Labor für Kristallzüchtung und -charakterisierung von Prof. Dr. -Ing. Peter Wellmann widmet sich in der Abteilung Elektronische Materialien und Energietechnik der Materialabteilung (Friedrich-Alexander Universität Erlangen-Nürnberg) der Kristallzüchtung, Epitaxie und Charakterisierung moderner Themen der Halbleitertechnologie. Materialien zur Energieeinsparung stehen derzeit im Fokus der Forschung.
1992: Physics Diploma at the Institute of Technical Physics 1 (University of Erlangen-Nürnberg) working with Prof. Dr. G. Döhler – spektroscopical investigations of InP n-i-p-i doping superlattices.
1995: Promotion (Dr.-Ing.) at the Institute for Materials Science 6 – Electronic Materials (University of Erlangen-Nürnberg) working with Prof. Dr. A. Winnacker – rare earth (erbium and ytterbium) doped quaternary InGaAsP semiconductors.
1996-1998: PostDoc at the Materials Department (UCSB, University of California in Santa Barbara, USA) working with Prof. Dr. P.M. Petroff – hybride ferromagnet semiconductor systems (synthesis, characterization and device technology) and tuning of self assembled InAs quantum dots.
1998-2001: “Habilitation” at the Institute for Materials Science 6 – Electronic Materials (University of Erlangen-Nürnberg) working with Prof. Dr. A. Winnacker – vapor growth and characterization of SiC single crystals.
2001: “Privatdozent” (faculty member) at the Institute for Materials Science 6 – Electronic Materials (University of Erlangen-Nürnberg) – vapor growth of wide bandgap semiconductors, semiconductor characterization, spectroscopical investigations of organic semiconductors.
Jan.-Apr. 2004: Invited Professor at the Institut National Polytechnique de Grenoble (INPG), working with Prof. Dr. Michel Pons – numerical modeling of a modified physical vapor transport reactor for SiC crystal growth and optical characterization.
Apr. 2006: Invited Professor in the Groupe d’Etude des Semi-Conducteurs (GES) (Université Montpellier 2, France) working with Prof. Dr. Jean Camassel – electrical and optical characterization of SiC.
2006: apl. Professor at the Materials Department 6 – Electronic Materials (University of Erlangen-Nürnberg) – – vapor growth of wide bandgap semiconductors (in particular SiC), organic light emitting device (OLED) research, hybrid material composites of inorganic nanoparticles imbedded in organic semiconductors, semiconductor characterization (electrical, optical, structural).
since 2007: Professor at the Materials Department 6 (i-MEET) – Electronic Materials (University of Erlangen-Nürnberg) – vapor growth of wide bandgap semiconductors (in particular SiC), hight temperature crystallization, thin film solar cell materials (chalcopyrite and kesterite), hybrid material composites of inorganic nanoparticles imbedded in organic semiconductors, semiconductor characterization (electrical, optical, structural), since 2012 treasurer of the German Crystal Growth Association DGKK, since 2012 member of the E-MRS executive committee.
Entwicklung von Materialien für Leistungselektronik, Energieeinsparung und neuartige photonische Anwendungen mit dem Schwerpunkt auf dem Halbleiter SiC.
Sublimation und chemische Gasphasenabscheidung von Halbleitern mit großer Bandlücke (insbesondere SiC)
2D und 3D Röntgen In-situ Visualisierung des Wachstumsprozesses
Entwicklung von Kristallwachstumstechnologie für industrielle Partner
Synthese von neuen Halbleitermaterialien (chalkogene Perowskite)
Charakterisierung von Halbleitern (elektrisch, optisch, strukturell)
- Freund T., Jamshaid S., Monavvar M., Wellmann P.:
Synthesis of BaZrS3 and BaS3 Thin Films: High and Low Temperature Approaches
In: Crystals 14 (2024), Article No.: 267
ISSN: 2073-4352
DOI: 10.3390/cryst14030267
BibTeX: Download - Jamshaid S., Cicconi MR., Heiß W., Webber KG., Wellmann P.:
Synthesis and Characterization of BaZrS3 Thin Films via Stacked Layer Methodology: A Comparative Study of BaZrS3 on Zirconium Foil and Silicon Carbide Substrates
In: Advanced Engineering Materials (2024)
ISSN: 1438-1656
DOI: 10.1002/adem.202302161
BibTeX: Download
2023
- Ihle J., Wellmann P.:
In Situ Monitoring of the Ambient Gas Phase during PVT Growth of Nominally Undoped High Resistivity SiC Boules
DOI: 10.4028/p-568g51
BibTeX: Download - Kollmuß M., La Via F., Wellmann P.:
Effect of Growth Conditions on the Surface Morphology and Defect Density of CS-PVT-Grown 3C-SiC
In: Crystal Research and Technology (2023)
ISSN: 0232-1300
DOI: 10.1002/crat.202300034
BibTeX: Download - Kollmuß M., Shi X., Ou H., Wellmann P.:
Transfer of Heteroepitaxial Grown 3C-SiC Layers for Application in Optical Frequency Combs
DOI: 10.4028/p-58x5tx
BibTeX: Download - Nguyen BD., Roder M., Danilewsky A., Steiner J., Wellmann P., Sandfeld S.:
Automated analysis of X-ray topography of 4H-SiC wafers: Image analysis, numerical computations, and artificial intelligence approaches for locating and characterizing screw dislocations
In: Journal of Materials Research (2023)
ISSN: 0884-2914
DOI: 10.1557/s43578-022-00880-z
BibTeX: Download - Ou H., Shi X., Lu Y., Kollmuß M., Steiner J., Tabouret V., Syväjärvi M., Wellmann P., Chaussende D.:
Novel Photonic Applications of Silicon Carbide
In: Materials 16 (2023), Article No.: 1014
ISSN: 1996-1944
DOI: 10.3390/ma16031014
BibTeX: Download - Steiner J., Nguyen BD., Sandfeld S., Wellmann P.:
Prevention of Bunched Basal Plane Dislocation Arrays in 4H-SiC PVT-Growth
DOI: 10.4028/p-eu98j0
BibTeX: Download - Steiner J., Schultheiß J., Wang S., Wellmann P.:
Fabrication of SiC-on-Insulator (SiCOI) Layers by Chemical Vapor Deposition of 3C-SiC on Si-in-Insulator Substrates at Low Deposition Temperatures of 1120 °C
In: Crystals 13 (2023), Article No.: 1590
ISSN: 2073-4352
DOI: 10.3390/cryst13111590
BibTeX: Download - Strüber S., Arzig M., Steiner J., Salamon M., Uhlmann N., Wellmann P.:
Investigation of the Nucleation Process During the Initial Stage of PVT Growth of 4H-SiC
In: Solid State Phenomena, Trans Tech Publications Ltd, 2023, p. 51-56
DOI: 10.4028/p-x54xp1
BibTeX: Download - Wellmann P., Steiner J., Strüber S., Arzig M., Salamon M., Uhlmann N., Nguyen BD., Sandfeld S.:
The processing chain of the wide bandgap semiconductor SiC – How small steps enabled a mature technology
In: Diamond and Related Materials 136 (2023), Article No.: 109895
ISSN: 0925-9635
DOI: 10.1016/j.diamond.2023.109895
BibTeX: Download
2022
- Arzig M., Künecke U., Salamon M., Uhlmann N., Wellmann P.:
Analysis of the Morphology of the Growth Interface as a Function of the Gas Phase Composition during the PVT Growth of Silicon Carbide
13th European Conference on Silicon Carbide and Related Materials, ECSCRM 2021 (Online, October 24, 2021 - October 28, 2021)
In: Jean François Michaud, Luong Viet Phung, Daniel Alquier, Dominique Planson (ed.): Materials Science Forum 2022
DOI: 10.4028/p-f58944
BibTeX: Download - Calogero G., Deretzis I., Fisicaro G., Kollmuß M., La Via F., Lombardo SF., Schöler M., Wellmann P., La Magna A.:
Multiscale Simulations for Defect-Controlled Processing of Group IV Materials
In: Crystals 12 (2022)
ISSN: 2073-4352
DOI: 10.3390/cryst12121701
BibTeX: Download - Freund T., Cicconi MR., Wellmann P.:
Fabrication of Bariumtrisulphide Thin Films as Precursors for Chalcogenide Perovskites
In: physica status solidi (b) (2022)
ISSN: 0370-1972
DOI: 10.1002/pssb.202200094
BibTeX: Download - Hayashi K., Lederer M., Fukumoto Y., Goto M., Yamamoto Y., Happo N., Harada M., Inamura Y., Oikawa K., Ohoyama K., Wellmann P.:
Determination of site occupancy of boron in 6H-SiC by multiple-wavelength neutron holography
In: Applied Physics Letters 120 (2022), Article No.: 132101
ISSN: 0003-6951
DOI: 10.1063/5.0080895
BibTeX: Download - Ihle J., Wellmann P.:
In Situ Monitoring of Unintentionally Released Nitrogen Gas in the Initial PVT Silicon Carbide Growth Process Using Mass Spectrometry
13th European Conference on Silicon Carbide and Related Materials, ECSCRM 2021 (Online, October 24, 2021 - October 28, 2021)
In: Jean François Michaud, Luong Viet Phung, Daniel Alquier, Dominique Planson (ed.): Materials Science Forum 2022
DOI: 10.4028/p-gt22u6
BibTeX: Download - Kollmuß M., Köhler J., Ou H., Fan W., Chaussende D., Hock R., Wellmann P.:
Chemical Vapor Deposition of 3C-SiC on [100] Oriented Silicon at low Temperature < 1200°C for Photonic Applications
13th European Conference on Silicon Carbide and Related Materials, ECSCRM 2021 (Online, October 24, 2021 - October 28, 2021)
In: Jean François Michaud, Luong Viet Phung, Daniel Alquier, Dominique Planson (ed.): Materials Science Forum 2022
DOI: 10.4028/p-nshb40
BibTeX: Download - Kollmuß M., Mauceri M., Roder M., La Via F., Wellmann P.:
In situ bow reduction during sublimation growth of cubic silicon carbide
In: Reviews on Advanced Materials Science 61 (2022), p. 829-837
ISSN: 1606-5131
DOI: 10.1515/rams-2022-0278
BibTeX: Download - Kollmuß M., Schöler M., Anzalone R., Mauceri M., La Via F., Wellmann P.:
Large Area Growth of Cubic Silicon Carbide Using Close Space PVT by Application of Homoepitaxial Seeding
13th European Conference on Silicon Carbide and Related Materials, ECSCRM 2021 (Online, October 24, 2021 - October 28, 2021)
In: Jean François Michaud, Luong Viet Phung, Daniel Alquier, Dominique Planson (ed.): Materials Science Forum 2022
DOI: 10.4028/p-6ef373
BibTeX: Download - Schimmel S., Salamon M., Tomida D., Kobelt I., Heinlein L., Kimmel AC., Steigerwald T., Ishiguro T., Honda Y., Chichibu SF., Amano H., Schlücker E., Wellmann P.:
In Situ Monitoring Technologies as Prospective Validation Tools for Numerical Simulations of Ammonothermal Crystal Growth
7th European Conference on Crystal Growth (Paris, July 25, 2022 - July 27, 2022)
BibTeX: Download - Steiner J., Nguyen BD., Roder M., Danilewsky A., Sandfeld S., Wellmann P.:
Applicability of a Flat-Bed Birefringence Setup for the Determination of Threading Dislocations of Silicon Carbide Wafers
13th European Conference on Silicon Carbide and Related Materials, ECSCRM 2021 (Online, October 24, 2021 - October 28, 2021)
In: Jean François Michaud, Luong Viet Phung, Daniel Alquier, Dominique Planson (ed.): Materials Science Forum 2022
DOI: 10.4028/p-y8n42h
BibTeX: Download - Steiner J., Wellmann P.:
Impact of Mechanical Stress and Nitrogen Doping on the Defect Distribution in the Initial Stage of the 4H-SiC PVT Growth Process
In: Materials 15 (2022)
ISSN: 1996-1944
DOI: 10.3390/ma15051897
BibTeX: Download - Wellmann P., Arzig M., Ihle J., Kollmuß M., Steiner J., Mauceri M., Crippa D., Lavia F., Salamon ., Uhlmann N., Roder M., Danilewsky A., Nguyen BD., Sandfeld S.:
Review of Sublimation Growth of SiC Bulk Crystals
13th European Conference on Silicon Carbide and Related Materials, ECSCRM 2021 (Virtual, Online, October 24, 2021 - October 28, 2021)
In: Jean François Michaud, Luong Viet Phung, Daniel Alquier, Dominique Planson (ed.): Materials Science Forum 2022
DOI: 10.4028/p-05sz31
BibTeX: Download
2021
- Arzig M., Künecke U., Salamon M., Uhlmann N., Wellmann P.:
Influence of the growth conditions on the formation of macro-steps on the growth interface of SiC-Crystals
In: Journal of Crystal Growth 576 (2021), Article No.: 126361
ISSN: 0022-0248
DOI: 10.1016/j.jcrysgro.2021.126361
BibTeX: Download - Künecke U., Schuster M., Wellmann P.:
Analysis of compositional gradients in Cu(In,Ga)(S,Se)2 solar cell absorbers using energy dispersive x-ray analysis with different acceleration energies
In: Materials 14 (2021), Article No.: 2861
ISSN: 1996-1944
DOI: 10.3390/ma14112861
URL: https://www.mdpi.com/1996-1944/14/11/2861
BibTeX: Download - Schimmel S., Tomida D., Saito M., Bao Q., Ishiguro T., Honda Y., Chichibu SF., Amano H., Wellmann P.:
Numerical Simulations of Ammonothermal Crystal Growth of GaN and Pathways towards their Experimental Validation
Seminar of the Young Crystal Growers (DGKK) (Berlin, October 5, 2022 - October 6, 2021)
BibTeX: Download - Schimmel S., Wellmann P.:
In Situ Visualization of the Ammonothermal Crystallization Process by X-ray Technology
In: Elke Meissner, Rainer Niewa (ed.): Ammonothermal Synthesis and Crystal Growth of Nitrides, Springer, Cham, 2021, p. 171-190 (Springer Series in Materials Science, Vol.304)
ISBN: 978-3-030-56305-9
DOI: 10.1007/978-3-030-56305-9_10
BibTeX: Download - Schlücker E., Hertweck B., Schimmel S., Wellmann P.:
Special Equipment for Ammonothermal Processes
In: Elke Meissner, Rainer Niewa (ed.): Ammonothermal Synthesis and Crystal Growth of Nitrides, Springer, Cham, 2021, p. 317-328 (Springer Series in Materials Science, Vol.304)
ISBN: 978-3-030-56305-9
DOI: 10.1007/978-3-030-56305-9_17
BibTeX: Download - Schöler M., La Via F., Mauceri M., Wellmann P.:
Overgrowth of Protrusion Defects during Sublimation Growth of Cubic Silicon Carbide Using Free-Standing Cubic Silicon Carbide Substrates
In: Crystal Growth and Design (2021)
ISSN: 1528-7483
DOI: 10.1021/acs.cgd.1c00343
BibTeX: Download - Via FL., Zimbone M., Bongiorno C., La Magna A., Fisicaro G., Deretzis I., Scuderi V., Calabretta C., Giannazzo F., Zielinski M., Anzalone R., Mauceri M., Crippa D., Scalise E., Marzegalli A., Sarikov A., Miglio L., Jokubavicius V., Syvajarvi M., Yakimova R., Schuh P., Schöler M., Kollmuß M., Wellmann P.:
New approaches and understandings in the growth of cubic silicon carbide
In: Materials 14 (2021), Article No.: 5348
ISSN: 1996-1944
DOI: 10.3390/ma14185348
BibTeX: Download
2020
- Arzig M., Salamon M., Hsiao TC., Uhlmann N., Wellmann P.:
Influence of the growth interface shape on the defect characteristics in the facet region of 4H-SiC single crystals
In: Journal of Crystal Growth 532 (2020), Article No.: 125436
ISSN: 0022-0248
DOI: 10.1016/j.jcrysgro.2019.125436
BibTeX: Download - Danilewsky A., Wellmann P., Miller W.:
The 50th Anniversary of the German Association for Crystal Growth, DGKK
In: Crystal Research and Technology 55 (2020), Article No.: 2000009
ISSN: 0232-1300
DOI: 10.1002/crat.202000009
BibTeX: Download - Nguyen BD., Rausch A., Steiner J., Wellmann P., Sandfeld S.:
On the importance of dislocation flow in continuum plasticity models for semiconductor materials
In: Journal of Crystal Growth 532 (2020), Article No.: 125414
ISSN: 0022-0248
DOI: 10.1016/j.jcrysgro.2019.125414
BibTeX: Download - Schimmel S., Kobelt I., Heinlein L., Kimmel AC., Steigerwald T., Schlücker E., Wellmann P.:
Flow stability, convective heat transfer and chemical reactions in ammonothermal autoclaves—insights by in situ measurements of fluid temperatures
In: Crystals 10 (2020), p. 1-18
ISSN: 2073-4352
DOI: 10.3390/cryst10090723
BibTeX: Download - Schöler M., Lederer M., Schuh P., Wellmann P.:
Intentional Incorporation and Tailoring of Point Defects during Sublimation Growth of Cubic Silicon Carbide by Variation of Process Parameters
In: physica status solidi (b) 257 (2020), Article No.: 1900286
ISSN: 0370-1972
DOI: 10.1002/pssb.201900286
BibTeX: Download - Steiner J., Arzig M., Denisov A., Wellmann P.:
Impact of Varying Parameters on the Temperature Gradients in 100 mm Silicon Carbide Bulk Growth in a Computer Simulation Validated by Experimental Results
In: Crystal Research and Technology 55 (2020), Article No.: 1900121
ISSN: 0232-1300
DOI: 10.1002/crat.201900121
BibTeX: Download - Sytnyk M., Yousefi-Amin AA., Freund T., Prihoda A., Götz K., Unruh T., Harreiß C., Will J., Spiecker E., Levchuk J., Osvet A., Brabec C., Künecke U., Wellmann P., Volobuev VV., Korczak J., Szczerbakow A., Story T., Simbrunner C., Springholz G., Wechsler D., Lytken O., Lotter S., Kampmann F., Maultzsch J., Singh K., Voznyy O., Heiß W.:
Epitaxial Metal Halide Perovskites by Inkjet-Printing on Various Substrates
In: Advanced Functional Materials 30 (2020), Article No.: ARTN 2004612
ISSN: 1616-301X
DOI: 10.1002/adfm.202004612
BibTeX: Download - Weber A., Lechner R., Grünsteidl S., Borowski P., Schubbert C., Dalibor T., Heise SJ., Ohland J., Savchenko I., Ahmed H., Hirwa H., Parisi J., Klenk R., Reyes-Figueroa P., Farias Basulto G., Aghaei M., Ulbrich C., Waack E., Hock R., Dallmann J., Künecke U., Schuster M., Wellmann P.:
Investigating and Improving Performance Ratio of Cu(In,Ga)(S,Se)2 Photovoltaic Devices
EU PVSEC (Marseille, September 7, 2020 - September 11, 2020)
BibTeX: Download - Wellmann P.:
Perfect materials as the base for technical innovation
In: The Innovation Platform 4 (2020), p. 82-85
URL: https://www.innovationnewsnetwork.com/the-innovation-platform/
BibTeX: Download - Wellmann P., Schuh P., Kollmuß M., Schöler M., Steiner J., Zielinski M., Mauceri M., La Via F.:
Prospects of bulk growth of 3C-SiC using sublimation growth
In: Materials Science Forum 1004 MSF (2020), p. 113-119
ISSN: 0255-5476
DOI: 10.4028/www.scientific.net/MSF.1004.113
BibTeX: Download
2019
- Arzig M., Salamon M., Uhlmann N., Wellmann P.:
Investigation of the growth kinetics of SiC crystals during physical vapor transport growth by the application of in-situ 3D computed tomography visualization
In: Advanced Engineering Materials (2019), Article No.: 1900778
ISSN: 1438-1656
DOI: 10.1002/adem.201900778
BibTeX: Download - Arzig M., Salamon M., Uhlmann N., Wellmann P.:
Tracking of the growth interface during pvt-growth of SiC boules using a X-ray computed tomography setup
In: Materials Science Forum 963 (2019), p. 14-17
ISSN: 0255-5476
DOI: 10.4028/www.scientific.net/MSF.963.14
BibTeX: Download - Arzig M., Steiner J., Salamon M., Uhlmann N., Wellmann P.:
Influence of morphological changes in a source material on the growth interface of 4H-SiC single crystals
In: Materials 12 (2019), Article No.: 2591
ISSN: 1996-1944
DOI: 10.3390/ma12162591
BibTeX: Download - Ellefsen OM., Arzig M., Steiner J., Wellmann P., Runde P.:
Optimization of the SiC Powder Source Material for Improved Process Conditions During PVT Growth of SiC Boules
In: Materials 12 (2019), Article No.: 3272
ISSN: 1996-1944
DOI: 10.3390/ma12193272
BibTeX: Download - Hassanien AE., Abdelhaleem S., Ahmad R., Schuster M., Moustafa SH., Distaso M., Peukert W., Wellmann P.:
Effect of Fast Annealing on Structural Characteristics and Optical Properties of Cu2ZnSnS4 Absorber Films Deposited by Doctor-Blade Technique
In: Journal of Nanoelectronics and Optoelectronics 14 (2019), p. 1394-1400
ISSN: 1555-130X
DOI: 10.1166/jno.2019.2633
BibTeX: Download - Lin L., Ou Y., Jokubavicius V., Syväjärvi M., Liang M., Liu Z., Yi X., Schuh P., Wellmann P., Herstrøm B., Jensen F., Ou H.:
An adhesive bonding approach by hydrogen silsesquioxane for silicon carbide-based LED applications
In: Materials Science in Semiconductor Processing 91 (2019), p. 9-12
ISSN: 1369-8001
DOI: 10.1016/j.mssp.2018.10.028
BibTeX: Download - Salamon M., Arzig M., Uhlmann N., Wellmann P.:
Advances in In Situ SiC Growth Analysis Using Cone Beam Computed Tomography
In: Materials Science Forum 963 (2019), p. 5-9
ISSN: 0255-5476
DOI: 10.4028/www.scientific.net/MSF.963.5
BibTeX: Download - Salamon M., Arzig M., Wellmann P., Uhlmann N.:
Comparison of achievable contrast features in computed tomography observing the growth of a 4H-SiC bulk crystal
In: Materials 12 (2019), Article No.: 3652
ISSN: 1996-1944
DOI: 10.3390/ma12223652
BibTeX: Download - Salamon M., Arzig M., Wellmann P., Uhlmann N.:
Three-dimensional in-situ growth surveillance of bulky SiC crystals
International Symposium on Digital Industrial Radiology and Computed Tomography – DIR2019 (Fürth, July 2, 2019 - July 4, 2019)
In: German Society for Non-Destructive Testing (DGZfP) (ed.): Proceedings of the DIR 2019 2019
BibTeX: Download - Schuh P., Künecke U., Litrico G., Mauceri M., La Via F., Monnoye S., Zielinski M., Wellmann P.:
Vapor Growth of 3C-SiC Using the Transition Layer of 3C-SiC on Si CVD Templates
In: Materials Science Forum 963 (2019), p. 149-152
ISSN: 0255-5476
DOI: 10.4028/www.scientific.net/MSF.963.149
BibTeX: Download - Schuh P., La Via F., Mauceri M., Zielinski M., Wellmann P.:
Growth of large-area, stress-free, and bulk-like 3C-SiC (100) using 3C-SiC-on-Si in vapor phase growth
In: Materials 12 (2019), Article No.: 2179
ISSN: 1996-1944
DOI: 10.3390/ma12132179
BibTeX: Download - Schuh P., Steiner J., La Via F., Mauceri M., Zielinski M., Wellmann P.:
Limitations during Vapor Phase Growth of Bulk (100)
3C-SiC Using 3C-SiC-on-SiC Seeding Stacks
In: Materials 12 (2019), Article No.: 2353
ISSN: 1996-1944
DOI: 10.3390/ma12152353
URL: https://www.mdpi.com/1996-1944/12/15/2353
BibTeX: Download - Schuster M., Stapf D., Osterrieder T., Barthel V., Wellmann P.:
Vacuum-Free and Highly Dense Nanoparticle Based Low-Band-Gap CuInSe2 Thin-Films Manufactured by Face-to-Face Annealing with Application of Uniaxial Mechanical Pressure
In: Coatings 9 (2019), p. 1-16
ISSN: 2079-6412
DOI: 10.3390/coatings9080484
URL: https://www.mdpi.com/2079-6412/9/8/484
BibTeX: Download - Schöler M., Brecht C., Wellmann P.:
Annealing-induced changes in the nature of point defects in sublimation-grown cubic silicon carbide
In: Materials 12 (2019), Article No.: 2487
ISSN: 1996-1944
DOI: 10.3390/ma12152487
BibTeX: Download - Schöler M., Lederer M., Schuh P., Wellmann P.:
Incorporation and control of defects with quantum functionality during sublimation growth of cubic silicon carbide
(2019), Article No.: arXiv:1906.07433
URL: https://arxiv.org/abs/1906.07433
BibTeX: Download
(online publication) - Schöler M., Lederer M., Wellmann P.:
Deep electronic levels in n-type and p-type 3C-SiC
In: Materials Science Forum 963 (2019), p. 297-300
ISSN: 0255-5476
DOI: 10.4028/www.scientific.net/MSF.963.297
BibTeX: Download - Schöler M., Schuh P., Steiner J., Wellmann P.:
Modeling of the PVT Growth Process of Bulk 3C-SiC - Growth Process Development and Challenge of the Right Materials Data Base
In: Materials Science Forum 963 (2019), p. 157-160
ISSN: 0255-5476
DOI: 10.4028/www.scientific.net/MSF.963.157
BibTeX: Download - Steiner J., Arzig M., Hsiao TC., Wellmann P.:
Optimization of the SiC powder source size distribution for the sublimation growth of long crystals boules
In: Materials Science Forum 963 (2019), p. 42-45
ISSN: 0255-5476
DOI: 10.4028/www.scientific.net/MSF.963.42
BibTeX: Download - Steiner J., Roder M., Nguyen BD., Sandfeld S., Danilewsky A., Wellmann P.:
Analysis of the basal plane dislocation density and thermomechanical stress during 100 mm PVT growth of 4H-SiC
In: Materials 12 (2019), Article No.: 2207
ISSN: 1996-1944
DOI: 10.3390/ma12132207
BibTeX: Download - Tarekegne AT., Norrman K., Jokubavicius V., Syväjärvi M., Schuh P., Wellmann P., Ou H.:
Impacts of carrier capture processes in the thermal quenching of photoluminescence in Al–N co-doped SiC
In: Applied Physics B-Lasers and Optics 125 (2019), Article No.: 172
ISSN: 0946-2171
DOI: 10.1007/s00340-019-7279-8
BibTeX: Download - Wellmann P., La Via F., Jennings M. (ed.):
Silicon Carbide and Related Materials for Energy Saving Applications—Select Papers from E-MRS 2019—Symposium “Silicon Carbide and Related Materials for Energy Saving Applications"
2019
(Materials, Vol. Energy Materials)
BibTeX: Download
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